boron dope meaning in English
硼掺杂
Examples
- The conductivity and thermo - stability of diamond with boron doping could be improved
通过掺杂硼，可以提高金刚石的导电性和热稳定性。 - Preparation of boron doping nano - tio2 and their photocatalytic performance for xylenol orange degradation
2的制备及其光催化降解二甲酚橙的性能 - In this paper , firstly , the effect of heavy boron - doping on oxygen precipitation was investigated . after annealed at different conditions , it is found that oxygen precipitation is enhanced by heavily boron doping , especially at high temperature
本文研究了直拉重掺硼单晶硅的氧沉淀行为，着重研究了直拉重掺硼硅单晶中的氧沉淀的热处理、内吸杂、 rtp处理等性能。 - For the substrate of heavily boron doped wafer , it has been proved that oxygen concentration is increased and oxygen precipitation is enhanced by hb ( heavily boron - doping ) during crystal growth , which is beneficial for ig and therefore improve the yield of ulsi
另一方面，在相同的晶体生长条件下，重掺硼硅单晶氧含量升高，氧沉淀被增强，能形成有效吸杂点，提高硅片机械强度，抑制void缺陷，有利于提高ulsi的成品率。 - We consider that the complexes of bmon ( m , n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling . therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation
在实验事实的基础上，我们认为在重掺硼硅单晶生长过程中， bmon ( m , n 1 )复合体或掺b引起的点缺陷能在晶体冷却过程中的较高温度阶段形成，且在随后的退火过程中能稳定存在，作为氧沉淀形核的核心，从而促进了氧沉淀，减小了大直径硅单晶中void缺陷的尺寸，增加其密度。